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-rw-r--r--include/flash.h11
1 files changed, 6 insertions, 5 deletions
diff --git a/include/flash.h b/include/flash.h
index 4fa59492..1f422ef9 100644
--- a/include/flash.h
+++ b/include/flash.h
@@ -126,16 +126,17 @@ enum write_granularity {
#define FEATURE_4BA_ENTER (1 << 10) /**< Can enter/exit 4BA mode with instructions 0xb7/0xe9 w/o WREN */
#define FEATURE_4BA_ENTER_WREN (1 << 11) /**< Can enter/exit 4BA mode with instructions 0xb7/0xe9 after WREN */
#define FEATURE_4BA_ENTER_EAR7 (1 << 12) /**< Can enter/exit 4BA mode by setting bit7 of the ext addr reg */
-#define FEATURE_4BA_EXT_ADDR (1 << 13) /**< Regular 3-byte operations can be used by writing the most
- significant address byte into an extended address register. */
+#define FEATURE_4BA_EAR_C5C8 (1 << 13) /**< Regular 3-byte operations can be used by writing the most
+ significant address byte into an extended address register
+ (using 0xc5/0xc8 instructions). */
#define FEATURE_4BA_READ (1 << 14) /**< Native 4BA read instruction (0x13) is supported. */
#define FEATURE_4BA_FAST_READ (1 << 15) /**< Native 4BA fast read instruction (0x0c) is supported. */
#define FEATURE_4BA_WRITE (1 << 16) /**< Native 4BA byte program (0x12) is supported. */
/* 4BA Shorthands */
#define FEATURE_4BA_NATIVE (FEATURE_4BA_READ | FEATURE_4BA_FAST_READ | FEATURE_4BA_WRITE)
-#define FEATURE_4BA (FEATURE_4BA_ENTER | FEATURE_4BA_EXT_ADDR | FEATURE_4BA_NATIVE)
-#define FEATURE_4BA_WREN (FEATURE_4BA_ENTER_WREN | FEATURE_4BA_EXT_ADDR | FEATURE_4BA_NATIVE)
-#define FEATURE_4BA_EAR7 (FEATURE_4BA_ENTER_EAR7 | FEATURE_4BA_EXT_ADDR | FEATURE_4BA_NATIVE)
+#define FEATURE_4BA (FEATURE_4BA_ENTER | FEATURE_4BA_EAR_C5C8 | FEATURE_4BA_NATIVE)
+#define FEATURE_4BA_WREN (FEATURE_4BA_ENTER_WREN | FEATURE_4BA_EAR_C5C8 | FEATURE_4BA_NATIVE)
+#define FEATURE_4BA_EAR7 (FEATURE_4BA_ENTER_EAR7 | FEATURE_4BA_EAR_C5C8 | FEATURE_4BA_NATIVE)
/*
* Most flash chips are erased to ones and programmed to zeros. However, some
* other flash chips, such as the ENE KB9012 internal flash, work the opposite way.